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Design of white light-emitting diodes using InGaN/AlInGaN quantum-well structures

Identifieur interne : 00A815 ( Main/Repository ); précédent : 00A814; suivant : 00A816

Design of white light-emitting diodes using InGaN/AlInGaN quantum-well structures

Auteurs : RBID : Pascal:04-0055892

Descripteurs français

Pascal (Inist)
- 7321F, 7867D, 8560J, 8530D, 7855C, 7320A, Appareillage, Aluminium composé, Indium composé, Gallium composé, Semiconducteur III-V, Semiconducteur bande interdite large, Puits quantique semiconducteur, Diode électroluminescente, Bande valence, Photoluminescence, Modèle dispositif semiconducteur, Dispositif puits quantique.

English descriptors

KwdEn :
- Aluminium compounds, Gallium compounds, III-V semiconductors, Indium compounds, Instrumentation, Light emitting diodes, Photoluminescence, Quantum well devices, Semiconductor device models, Semiconductor quantum wells, Valence bands, Wide band gap semiconductors.

Abstract

Based on the Rashba-Sheka-Pikus Hamiltonian in the vicinity of the Γ point, and taking into consideration spontaneous and piezoelectric polarization, the optical intensity of nitride-based quantum-well light-emitting diodes has been calculated. It is found that strain substantially alters the subband structure and thus the output intensity of these nitride-biased quantum-well light-emitting diodes. A design that uses AlInGaN as the quantum barrier is proposed to realize efficient red emission, which is hard to achieve if GaN is used as the barrier. In the proposed design, three different InGaN/AlInGaN quantum-well structures emit red, green, and blue light of similar intensity. Also, to achieve high efficiency, important factors related to the oscillator strength are discussed in detail. © 2004 American Institute of Physics.

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Le document en format XML

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<author><name sortKey="Xiao, D" uniqKey="Xiao D">D. Xiao</name>
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<author><name sortKey="Kim, K W" uniqKey="Kim K">K. W. Kim</name>
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<author><name sortKey="Bedair, S M" uniqKey="Bedair S">S. M. Bedair</name>
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<author><name sortKey="Zavada, J M" uniqKey="Zavada J">J. M. Zavada</name>
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<front><div type="abstract" xml:lang="en">Based on the Rashba-Sheka-Pikus Hamiltonian in the vicinity of the Γ point, and taking into consideration spontaneous and piezoelectric polarization, the optical intensity of nitride-based quantum-well light-emitting diodes has been calculated. It is found that strain substantially alters the subband structure and thus the output intensity of these nitride-biased quantum-well light-emitting diodes. A design that uses AlInGaN as the quantum barrier is proposed to realize efficient red emission, which is hard to achieve if GaN is used as the barrier. In the proposed design, three different InGaN/AlInGaN quantum-well structures emit red, green, and blue light of similar intensity. Also, to achieve high efficiency, important factors related to the oscillator strength are discussed in detail. © 2004 American Institute of Physics.</div>
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Design of white light-emitting diodes using InGaN/AlInGaN quantum-well structures

Design of white light-emitting diodes using InGaN/AlInGaN quantum-well structures

Descripteurs français

English descriptors

Abstract

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Links to Exploration step

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